Spatial Distribution of Local Density of States in the Presence of Impurity on Semiconductor Surface

Abstract. We present the results of detailed theoretical investigations of changes in local density of total electronic surface states in 1D atomic chain and in 2D anisotropic atomic semiconductor lattice in the presence of impurity atom for a wide range of applied bias voltage. We have found that taking into account changes in density of continuous spectrum states leads to the formation of a dip at the particular value of applied voltage when we are interested in the density of states above the impurity atom. For the fixed value of the distance from the impurity it leads to a series of dips. The behavior of local density of states with increasing of the distance from impurity along the chain differs from the behavior in the direction perpendicular to the chain.